The Impact of Temperature Variations on the Electrical Performance of SOI FinFET Devices

The temperature‐dependent self‐heating effect (SHE) is critical for both accurate modeling and selecting optimal operating conditions, as elevated temperatures can compromise device reliability. These days, technology trends toward the miniaturization of electronic devices. As a result, device size decreases, and the packing density of a circuit at the integrated level increases. The combination of these two trends leads to an increase in power density and circuit temperature. For these reasons, our work aims to develop an electrothermal simulation of 20‐nm SOI‐FinFET. To rigorously analyze electrical behavior, we developed a mathematical framework integrating the ballistic‐diffusive equation (BDE). The proposed model is validated by comparing simulated IDS‐VGS characteristics with experimental data, demonstrating strong agreement. The SHE is related to thermal design, which is considered a basic procedure in modern microelectronics technology, measuring devices, and a series of modeling simulations and computer analysis of devices. “OFF” is not totally “OFF,” we have demonstrated the evolution of OFF‐current (I off ) with device temperature and the impact of temperature in 20‐nm SOI‐FinFET on the subthreshold swing (SS) with both V GS = 0.8 V and V DS = 0.8 V.