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Transverse mode stabilisation of InGaAsP/InP buried crescent laser diodes emitting at 1.3 μm is described. Width and thickness of the active region have been reduced to stabilise the transverse mode. Operation up to 17 mW/facet in a stable transverse mode and threshold current as low as 12 mA in CW operation have been obtained.
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Oomura et al. (1981) studied this question.
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