Novel ZrInZnO semiconductor materials to resolve transistor instability for active-matrix organic light-emitting diodes are proposed. The ZrInZnO film is preprared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin-film transistors fabricated have good electrical performances as well as excellent stability under long-term bias stresses.
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Park et al. (2008) studied this question.
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