An analytical two-dimensional perturbation method to model submicron GaAs MESFETs

A two-dimensional analytical model has been developed for finding the potential distribution in submicron GaAs MESFETs. The potential distribution is obtained by solving Poisson's equation with nonrectangular boundary conditions using a perturbation method. The expression for the potential is used to derive the current-voltage relation for GaAs MESFETs having channel lengths ranging from 0.2 to 0.9 mu m. The model is applicable in the linear, saturation, and subthreshold regimes of the current-voltage characteristics. Numerically simulated results are compared with experimental data and are found to be in good agreement.>