Quantum Hall charge sensor for single-donor nuclear spin detection in silicon

We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can offer both nuclear spin measurement and robustness against environmental defects. 31 P donor spins in isotopically purified 28 Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.