Electrical transport and electroluminescence properties of n-ZnO single nanowires

The n-ZnO single nanowire/p+-Si heterojunctions are fabricated using two types (A and B) of ZnO nanowires. Both types of nanowires are synthesized using the vapour phase transport method. Nanowires A, with growth direction along the high index, are grown on Si substrates. Nanowires B, with growth direction along [0001], are grown on In0.2Ga0.8N substrates. The electrical transport properties of nanowires A and B are investigated by fabricating single nanowire field effect transistors. The measured resistivities are 0.06 and 0.001 Ω cm, respectively. Sharp UV emission resulting from free exciton recombination in ZnO nanowire is observed in the electroluminescence spectra from both types of n-ZnO single nanowire/p+-Si heterojunctions.