A detailed microstructural analysis of laterally seeded silicon-on-oxide formed by scanning graphite strip heater recrystallization is presented for the first time. The recrystallized top silicon layer has a (100) orientation, but contains many subgrain boundaries formed by dislocation coalescence. The subgrains are misoriented by <0.3° and have no internal defects. β-SiC contamination of the top silicon layer was detected. It is probably due to particulate contamination from the top graphite strip heater.
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Pinizzotto et al. (1982) studied this question.
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