Hydrostatic pressure was applied to 1.5 μm buried heterostructure In0.8Ga0 2As/InP (1.8% strain) lasers. In contrast to bulk and unstrained MQW devices, no increase in quantum differential efficiency was observed indicating negligible intervalence band absorption. The pressure and temperature variation of the threshold current was explained assuming Auger recombination and a reduced hole mass.
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Ring et al. (1992) studied this question.
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