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We theoretically discuss the impact of defect-related rapid energy relaxation in quantum dots, by applying a lattice relaxation approach based on a multimode description for the electron phonon interaction. Our calculation for the Huang-Rhys parameters is able to show explicitly the dependence of lattice relaxation on the spatial extent of electron states. The calculated result indicates that a relaxation rate faster than picosecond can be obtained in a wide energy range of tens of meV.
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Li et al. (1997) studied this question.
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