Fabrication of InGaAsP/InP buried heterostructure laser using reactive ion etching and metalorganic chemical vapor deposition

1.3- mu m InGaAsP/InP buried heterostructure lasers were fabricated using Ch/sub 4//H/sub 2/ reactive ion etching (RIE) for mesa definition and metalorganic chemical vapor deposition for blocking laser growth. Results show that high-quality lasers can be made using RIE, with threshold current as low as 10 mA. It was also found that a slight chemical etching of the RIE mesas was necessary to obtain lasers with as high quality as those fabricated entirely by wet etching.>