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May 1, 1989Applied Physics Letters

High-power, high-efficiency 1.3 μm superluminescent diode with a buried bent absorbing guide structure

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Authors

HNHaruo NagaiPanasonic (Japan)YNYoshio NoguchiKagoshima UniversitySSShoichi SudoSoftBank Group (Japan)

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Nagai et al. (1989) studied this question.

synapsesocial.com/papers/6a7d1871d685fe2c2d775610https://doi.org/10.1063/1.101292
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