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December 15, 1991Physical review. B, Condensed matter

Intensity and temperature dependence of the steady-state light-induced defect density ina-Si:H

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Authors

PSP. V. SantosPaul Drude Institute for Solid State ElectronicsWJW. B. JacksonHewlett-Packard (United States)RSR. A. StreetPalo Alto Research Center

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Santos et al. (1991) studied this question.

synapsesocial.com/papers/6a7d20c83575152c8237d0e8https://doi.org/10.1103/physrevb.44.12800
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Also Consider

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  1. 1Physical processes in degradation of amorphous Si:H1986 · 29 citations
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  5. 5Defect equilibria in undopeda-Si:H1989 · 292 citations