Core–shell semiconductor nanowire heterostructures are fabricated using pulsed-laser deposition to coat silicon nanowires with a cadmium sulfide shell. The resulting heterostructures are used to fabricate lithographically defined intrawire p–n junctions via a selective etching process (see Figure). We present structural data and a proof- of-concept construction of intrawire light-emitting diodes.
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Hayden et al. (2005) studied this question.
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