Thin uniform InP nitride films less than 1000 Å have been obtained on InP substrates by direct thermal reaction with high purity ammonia gas at temperatures ranging from 530 to 560°C. From the electron diffraction measurements, it is found that the nitride films are composed of polycrystalline indium nitride and phosphorous nitride. Resistivities at room temperature of the thermally grown nitride films range from 10 s + to 10 s + Q·cm. Resistivities decrease within crease in nitridation time and temperature above 560°C, which are mainly caused by thermal decomposition of indium nitride.
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Masafumi Yamaguchi (1980) studied this question.
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