A new method for the calculation of photoionisation cross sections is presented. The complex band structure of the host semiconductor is calculated using the spherical model of Penn. The wavefunctions are then modified to provide a description of the wavefunction associated with an impurity. Use of the complex band dispersion relation provides a simple explanation of the inadequacy of the Lucovsky model (1965) when applied to very deep states.
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Blow et al. (1980) studied this question.
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