Electrical properties and conduction mechanisms of leakage current of tantalum pentoxide films have been studied. films were deposited by cold wall‐type, low‐pressure chemical vapor deposition (LPCVD), and then annealed at temperatures ranging from 600° to 900°C in . The leakage current flowing through films decreases drastically following the annealing. The conduction mechanism in the films annealed below 800°C is dominated by hopping conduction, at room temperature. On the other hand, Fowler‐Nordheim tunneling conduction becomes predominant for films annealed above 850°C. The decrease in leakage current with increasing annealing temperature can be mainly explained by a reduction in the carrier density, originating from defects in the films, such as dangling bonds.
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Zaima et al. (1990) studied this question.