A High-Yield HfOₓ-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

In this letter, a resistive random access memory based on Ni electrode/HfOₓdielectric/n⁺Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio( > 10³), good retention characteristics( > 10⁵\ sat150\ ∘C), satisfactory pulse switching endurance( > 10⁵\ cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.