We have prepared Fe-doped InP epilayers by chemical beam epitaxy using a thermal atomic Fe beam. Epilayers having high resistivities (≳107 Ω cm) were obtained over a wide range of Fe concentrations. Resistivities as high as 1.3×108 Ω cm have been obtained. Such resistivity is almost equal to the theoretical value of 1.37×108 Ω cm that we estimate for intrinsic InP. The current-voltage characteristics exhibit both an ohmic and a space-charge-limited regime, and are consistent with the theory of single-carrier injection into a trap-free insulator. Pinning of the Fermi level near midgap by Fe-related deep levels is the mechanism by which the epilayer is made highly resistive. At room temperature, these traps are apparently deep enough that the carrier emission rate is negligible.
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Tsang et al. (1989) studied this question.
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