The bulk resistivity of Fe-doped metalorganic chemical vapor deposited grown epitaxial InP was determined from current-voltage and capacitance measurements made on Schottky-diode-like devices. The current-voltage data exhibit both an ohmic and a space-charge-limited regime, and the capacitance was found to be independent of applied bias. The electrical thickness was obtained from the capacitance using a relationship appropriate for current injection. Data for two samples representing both thin (∼1 μm) and thick (∼9 μm) epitaxial layers are presented. The resistivities were 6.5×107 Ω cm and 2.2×108 Ω cm.
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Macrander et al. (1984) studied this question.
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