Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

For quantum sensing and information processing, nitrogen-vacancy centers in diamond are not the only tool in the box. Silicon-vacancy centers in SiC are also of keen interest, but for successful applications, we must be able to reliably control where these color centers form in a device. Through ion implantation, the authors succeed in generating an array of single-photon emitters in SiC, with an efficiency of 19±{}4%. This ability could enable significant progress in spintronic and photonic quantum technologies.