Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins. Single-photon quantum emitters with optically active spins are desirable for quantum information processing, secure networks and nanosensing, but engineering of these spin centres has been challenging. Here, Fuch et al. demonstrate the control of spin centre density in silicon carbide over eight orders of magnitude.