Fully compensated ferrimagnet bilayer FeOCl-based multiferroic tunnel junctions

Although antiferromagnetic (AFM) materials surpass conventional ferromagnetic materials in multiferroic tunnel junctions (MFTJs) due to their ultrafast magnetodynamic response, their application is limited by the difficulty in reading the tunneling magnetoresistance using conventional methods. To address this challenge, we propose breaking the PT symmetry of bilayer FeOCl by vertically flipping. This symmetry-breaking induces spin-splitting in AFM bilayer FeOCl. We then design fully compensated ferrimagnet bilayer FeOCl and antiferroelectric bilayer In 2 Se 3 -based tunnel junctions. Using first-principles calculations combined with the non-equilibrium Green’s function method, we demonstrate that various non-volatile resistance states can be realized by adjusting the magnetic state of electrodes and the polarization direction of the ferroelectric barrier. The devices show a high tunneling magnetoresistance (TMR) of 1.8 × 10 3 % and electroresistance (TER) of 1.1 × 10 5 %. This study presents a method to induce spin-splitting in two-dimensional AFM materials and highlights their applications in high-speed and high-density AFM-based spintronic devices.