Passivation of InP using In(PO3)3-condensed phosphates: From oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices

Fabrication of high-quality InP metal-insulator-semiconductor field-effect-transistor (MISFET) devices implies that adequate passivation of the surface can be achieved. In this paper, a passivation process of the InP surface, is presented using In(PO3)3-like condensed phosphates. An extensive study of the physicochemical and structural properties of these oxides and of the microscopic properties of its interface with InP is carried on, using a combination of various techniques (reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, ellipsometry, and high-resolution transmission electron microscopy). High-quality MISFET devices have been fabricated; the high performances obtained in terms of transconductance and stability are well correlated with the good intrinsic properties of the oxides.