Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni∕Au p-metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnO∕GaN multilayer.
No takes yet. Share an insight, caveat, or question.
Zhong et al. (2007) studied this question.