In this letter, a high-performance (2̅01) β-Ga2O3vertical Schottky Barrier Diode (SBD) with a thermally oxidized termination is reported. A novel edge termination at the Schottky contact edge is formed by using thermal oxidation treatment, which reduces the electron concentration and effectively suppresses the peak electric field. By using a thermal oxidation termination, the breakdown voltage (Vbr) of β-Ga2O3SBD increases from 380 V to 940 V, and the specific on-resistance (Ron,sp) just increases from 2.9 mQ· cm2to 3.0 mQ· cm2. Our device demonstrates a power figure of merit (Vbr2/Ron,sp) as high as 295 MW/cm2. These results indicate that the thermally oxidized termination shows a new way to improve the breakdown characteristics of β-Ga2O3SBD.
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Wang et al. (2019) studied this question.
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