High-Performance Depletion/Enhancement-ode β -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

In this letter, we report on high-performance depletion/enhancement-modeβ-Ga2O3on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) of 600/450 mA/mm, which are nearly one order of magnitude higher than any other reportedIDvalues. The threshold voltage (VT) can be modulated by varying the thickness of theβ-Ga2O3films and the E-mode GOOI FET can be simply achieved by shrinking theβ-Ga2O3film thickness. Benefiting from the good interface betweenβ-Ga2O3and SiO2and wide bandgap ofβ-Ga2O3, a negligible transfer characteristic hysteresis, highIDON/OFF ratio of10¹⁰, and low subthreshold swing of 140 mV/decade for a 300-nm-thick SiO2are observed. E-mode GOOI FET with source to drain spacing of 0.9-μ mdemonstrates a breakdown voltage of 185 V and an average electric field (E) of 2 MV/cm, showing the great promise of GOOI FET for future power devices.