Wet thermal oxidation of AlAsSb was investigated. The oxidation kinetics was studied as a function of temperature and oxidation duration. An expression to allow accurate determination of the oxide depth for any temperature and time was established. Secondary ion mass spectrometry profiles and x-ray diffraction were used to demonstrate that an interfacial layer, composed of pure Sb and As and textured on InP, is formed during the oxidation process.
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Legay et al. (1997) studied this question.
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