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The effect of cesium adsorption on a thermally-cleaned wafer Si(111)7×7 surface was investigated by measuring the changes in the surface conductivity and capacitance in parallel. It is deduced from the results that a p-type region below the surface was formed in the Si wafer regardless of the type of conduction when it was heated up to 1500 K. The p-type region was 68 to 7 µm thick with an acceptor concentration of 10 15 to 10 16 cm -3 in n-type Si. Electrical conduction was observed in the Cs overlayer with coverages of more than 2.4×10 14 atoms·cm -2 . The overall dependence of the surface impedance upon the Cs coverage and frequency are well understood qualitatively.
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He et al. (1985) studied this question.
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