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The authors report energy-dependent proton and Co-60 test results and analysis assessing performance of In/sub 0.53/Ga/sub 0.47/As photodetectors and In/sub 0.71/Ga/sub 0.29/As/sub 0.61/P/sub 0.39/ laser diodes for satellite applications. Displacement damage degradation in the InGaAs photodetector is interpreted using DLTS. Novel calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Data are presented confirming the proton energy dependence of NIEL in a III-V material over the energy range of interest for spacecraft. Effects in optoelectronic devices due to total dose and ionization transients are also discussed.>
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Marshall et al. (1992) studied this question.
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