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The results of measurements of ac and dc electrical properties in anodic oxides on n-type indium phosphide are reported. The dc current, which is polarity dependent, appears to be due to Schottky emission. The semiconductor surface is inverted at zero bias with a potential of −0.9 V. An oxide and surface states charge density of 2.2 × 1011 electrons cm−2 is measured. The oxide relative permittivity decreases from 14.8 at 400 Hz to 4.5 at 106 Hz and the ac conductivity has a sublinear dependence on frequency.
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Eftekhari et al. (1983) studied this question.
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