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February 2, 1978Electronics Letters

InP–SiO ₂ m.i.s. structure with reduced interface state density near conduction band

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DFD. FritzscheBISDN (Germany)

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D. Fritzsche (1978) studied this question.

synapsesocial.com/papers/6a6fbe8535aa2c282ce1154f https://doi.org/10.1049/el:19780037

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