The photovoltaic properties of p-Zn3P2/n-ZnO heterojunction solar cells prepared by sputter deposition of ZnO on Zn3P2 substrates are reported. An active-area power conversion efficiency of ∼2% has been obtained. The experimental results are discussed on the basis of an interface recombination model. The interface plays a significant role in determining the performance of the device.
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Nayar et al. (1981) studied this question.
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