The electrical resistivity of bismuth from 4.2 to 300K can be explained in terms of a simple model which includes residual, intravalley and intervalley contributions to the total resistivity. Following Lopez (1968), two single-phonon intervalley processes are assumed, and reasonable values are found for the two characteristic phonon energies by curve fitting. The approximate T 2 behaviour commonly reported for the electrical transport properties of bismuth emerges as a natural consequence of the above combination of contributions to the total resistivity.
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Αναγνωστόπουλος et al. (1976) studied this question.
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