A quantitative comparison between theory and experiment is presented for the effect of hole-hole scattering on the mobility in both uncompensated and heavily compensated p-type germanium. In the former case, excellent agreement is obtained for impurity concentrations NI≤10¹⁶ cm^-3. An appreciable discrepancy is noted for compensated samples which is attributed to the use of the Born-approximation scattering cross section which gives equal weight to scattering of holes by ionized donors and acceptors.
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Appel et al. (1962) studied this question.
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