Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN(2)] were fabricated by lamination of the semiconductor crystal on Si-SiO(2)/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V(-1) s(-1), respectively, I(on):I(off) > 10(3), and near-zero threshold voltage.
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A 2009 study studied this question.