Excellent silicon nitride films which can be used as the gate insulator of an a-Si FET are fabricated by RF glow-discharge of SiH 4 –N 2 –H 2 gas mixtures. Resistivity of larger than 1×10 16 Ω·cm and breakdown strength of 6×10 6 V/cm are realized. The optimum deposition conditions are evaluated and briefly discussed in connection with mechanisms of the plasma-enhanced deposition.
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Katoh et al. (1983) studied this question.
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