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This paper describes insulating films of silicon nitride as deposited on silicon substrates by pyrolytic reaction and reactive sputtering. The following physical properties were investigated: amorphism, surface electron micrography, Si‐N atomic distance, infrared adsorption spectrum, index of refraction, dielectric constant, electrical resistivity, ionic conductivity and polarization, breakdown voltage, MIS CV characteristics and silicon surface charge, and related phenomena.
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S. M. Hu (1966) studied this question.
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