A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40°C–70°C) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAs without any extra energy source. A relatively high oxidation rate (≃1000 Å/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy (XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga 2 O 3 and As 2 O 3 .
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Wang et al. (1998) studied this question.
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