An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

In this paper, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source/drain parasitic resistance (R S/R D). Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the R S and R D can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the R S/R D increases with decreasing channel length and oxide thickness.