ProMOS Technologies (Taiwan)

Recent papers from ProMOS Technologies (Taiwan)

1. Digital Twins in the Construction Industry: A Perspective of Practitioners and Building AuthorityFrontiers in Built Environment · 2022
2. Bacterial colonization at caesarean section defects in women of secondary infertility: an observational studyBMC Pregnancy and Childbirth · 2022
3. PluriVox Program in Brazil’s Unified Health System: five-step group work to promote patient health behaviorsAletheia · 2022
4. Pengaruh Promosi, Atribut Toko (Store Attributes), dan Inovasi Produk Terhadap Keputusan Pembelian Ulang pada Nick Coffe di Kota Bengkulu2020
5. Design and Synthesis of Chiral Diene Ligands for RhI‐Catalyzed Enantioselective Arylation of N‐DPP‐protected Aldimines: Synthesis of the Antifungal Agent BifonazoleChemistry - A European Journal · 2017
6. Tetragonal ZrO₂/Al₂O₃ Stack as High-κ Gate Dielectric for Si-Based MOS DevicesIEEE Electron Device Letters · 2010
7. High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectricApplied Physics Letters · 2008
8. A Process for Inline Minority Carrier Lifetime Monitoring for the Furnace Performing Denuded Zone FormationIEEE Transactions on Semiconductor Manufacturing · 2008
9. Tungsten oxide/tungsten nanocrystals for nonvolatile memory devicesApplied Physics Letters · 2008
10. Impact of Organic Contamination From Partially Fluorinated O-Ring in High-Temperature Nitride Process on DRAM PerformanceIEEE Transactions on Semiconductor Manufacturing · 2008
11. High-Density Silicon Nanocrystal Formed on Nitrided Tunnel Oxide for Nonvolatile Memory ApplicationElectrochemical and Solid-State Letters · 2008
12. On the reverse short‐channel effect and threshold voltage roll‐off controls for 90 nm node MOSFETsJournal of the Chinese Institute of Engineers · 2007
13. Effect of Process Pressure on Atomic Layer Deposition of Al[sub 2]O[sub 3]Journal of The Electrochemical Society · 2007
14. Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAMIEEE Electron Device Letters · 2006
15. An All-MOS High-Linearity Voltage-to-Frequency Converter Chip With 520-kHz/V SensitivityIEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing · 2006
16. Dielectric response theory for electron energy loss in clad cylindrical systemsPhysical Review B · 2006
17. An analytical drain current model of short-channel MOSFETs including source/drain resistance effectJournal of International Crisis and Risk Communication Research · 2006
18. Improved Electrical Characteristics of NO-Based Storage Dielectric by N[sub 2]O Wet Oxidation and Postoxidation Treatment for Trench DRAMElectrochemical and Solid-State Letters · 2006
19. Extending storage dielectric scaling limit by reoxidizing nitrided NO dielectric for trench DRAMIEEE Electron Device Letters · 2005
20. Model to determine the backup capacity of a wafer foundryInternational Journal of Production Research · 2005