Attention is drawn to the effect of the self-field H HT of the bias current I HT through a Hall transducer (HT) on the objects of study and the measurement accuracy of the Hall magnetometer. The field H HT of an n -InSb– i- GaAs heteroepitaxial HT fabricated by growing a doped indium antimonide epitaxial film on a semi-insulating single-crystal i -GaAs substrate is considered. A setup is designed to study the spatial distribution of H HT on the surface of the HT and around it. It is found that magnetic induction jumps appear at the edges of a thin epitaxial n -InSb film near the Hall contacts of the HT due to the breaks in the force lines of the field H HT . For a nonuniform distribution of I HT over the cross section of the film, this gives rise to a voltage on the Hall contacts that is superimposed on the useful Hall signal, thus leading to an error.
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Rostami et al. (2025) studied this question.
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