Characteristics Analysis of DMG – SOI MOSFET Using Both High-k and Low-k Dielectrics Materials

Soma Rani Patra, Arpita Ghosh and Tiya Dey Malakar Advancement in nanodevice is possible through improving either the nanodevice structure with nano engineering techniques or by introducing material based modification. In this paper, dual material gate silicon-on-insulator (DMG - SOI) metal-oxide-semiconductor field effect transistor (MOSFET) using zirconium dioxide (ZrO2), a high-k gate dielectric material, is studied for the first time.