In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 /spl mu/m of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area.
No takes yet. Share an insight, caveat, or question.
Alok et al. (1997) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: