One-band density of states for some models for amorphous semiconductors

The authors use the equation-of-motion method to obtain directly the one-band density of states, projected on interior atoms, for three approximately 500-unit continuous random network models for amorphous group IV semiconductors and one 533-atom continuous random network model for amorphous arsenic. The presence of a sharp peak in the lower part of the band and the retreat of the lower band-edge are correlated with the concentration of five-membered rings of bonds.