Effects of Nitrogen Plasma Treatment on Tantalum Diffusion Barriers in Copper Metallization

In this study, the barrier properties of ultrathin Ta, TaN, and nitrogen plasma-treated Ta films were investigated by Cu/Ta(N)/Si structure. The barrier properties were evaluated by sheet resistance, film stress, X-ray diffraction, transmission electron microscopy, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. Nitrogen plasma-treated Ta films possess better barrier performance than sputtered Ta and TaN films. The sheet resistance of Cu/Ta/Si and Cu/TaN/Si increases, apparently, after annealing at 600 and 625°C, respectively. The Cu/30 min plasma-treated Ta/Si is fairly stable up to annealing at 700°C for 1 h. Diffusion resistance of the plasma-treated Ta barrier is more effective. It is believed that a new amorphous layer forms on the surface of Ta film after plasma treatment. The new amorphous layer possesses some nanocrystalline Ta 2 N phases with lattice constant 0.305 nm. It is believed that the amorphous layer containing some nanocrystals can alleviate Cu diffusion into the Si substrate and, hence, improve barrier performance.