The internal quantum efficiency (IQE) of three types of InGaN-based near-UV light-emitting diodes (LEDs) grown on different substrates was studied by excitation-power-density-dependent and temperature-dependent photoluminescence (PL) spectroscopy. IQE was evaluated under both the band-to-band excitation of GaN cladding layers and the selective excitation of InGaN active layers. A correlation between IQE and threading dislocation density was clearly observed under both excitation conditions. In addition, the dynamics of radiative and nonradiative recombinations was studied by time-resolved PL spectroscopy. The rate of nonradiative recombination was evaluated by measuring temperature-dependent nonradiative recombination lifetime. The validity of our method for estimating IQE is discussed on the basis of the correlation between IQE and nonradiative recombination rate for three LEDs with different threading dislocation densities.
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Kohno et al. (2012) studied this question.
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