Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 15, 1990Journal of Applied Physics

The effects of scattering on current-voltage characteristics, transient response, and particle trajectories in the numerical simulation of resonant tunneling diodes

View Full Paper
Ask AI
Bookmark
Share

Authors

KJKevin L. JensenUniversity of Maryland, College ParkFBF. A. BuotUniversity of San Carlos

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Jensen et al. (1990) studied this question.

synapsesocial.com/papers/6a7fa364b407ef5628422243https://doi.org/10.1063/1.345828
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electron Mobility in High-Purity GaAs1970 · 260 citations
  2. 2Numerical calculation of particle trajectories and tunneling times for resonant tunneling barrier structures1989 · 50 citations
  3. 3Self-consistent study of the resonant-tunneling diode1989 · 467 citations
  4. 4Wigner-function model of a resonant-tunneling semiconductor device1987 · 393 citations
  5. 5Numerical simulation of transient response and resonant-tunneling characteristics of double-barrier semiconductor structures as a function of experimental parameters1989 · 46 citations