The fabrication of nanopores in thin silicon nitride and aluminum oxide membranes by water vapor assisted, low-energy (0.2-20 kV) electron beam machining using a scanning electron microscope (SEM) is described. Using this technique, pores with diameters ranging in size from < 5 to 20 nm are easily formed. The nanopores are characterized by SEM, transmission electron microscopy (TEM) and atomic force microscopy (AFM). The mechanism of etching is briefly discussed.
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Spinney et al. (2010) studied this question.
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