Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs μm−1. Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of −467.09 μA μm−1 and an on-conductance of 233.55 μS μm−1. Radio frequency transistors fabricated on these samples exhibit high intrinsic fT and fMAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics. Single-walled carbon nanotube arrays have been proposed for use in electronics, but getting the tubes aligned and in high density is a very challenging task. Hu et al. show that catalyst particles dissolved in a substrate can slowly be brought to the surface, allowing continued controlled growth of nanotubes.