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The conductivity mechanisms in polycrystalline CuInSe 2 and the ordered vacancy compounds CuIn 3 Se 5 , CuIn 5 Se 8 and CuIn 7 Se 12 were studied by low temperature conductivity measurements and room temperature Hall and photoconductivity measurements. The polycrystalline films were structurally, morphologically and compositionally characterized using x-ray diffraction, atomic force microscopy and energy dispersive analysis by x-rays, respectively. In general, the films showed Mott's variable range hopping conduction in the temperature range below 200 K while above 200 K thermally activated conductivity due to grain boundary effects and defect levels was observed. To investigate the reason for the metallic behaviour shown by Cu-rich films, the films were etched and the change in behaviour was studied.
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Philip et al. (2004) studied this question.
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